 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2989 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D High Speed Switching D Low On-Resistance D No Secondary Breakdown D Low Driving Power D High Voltage D Repetitive Avalanche Rated Applications: D Switching Regulators D UPS D DC-DC Converters D General Purpose Power Amplifier Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Avalanche Current, Repetitive or Non-Repetitive (Tch +150C), IAR . . . . . . . . . . . . . . . . . . . . . 10A Avalanche Energy, EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.7mJ Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Symbol Test Conditions Min 600 3.5 Tch = +25C Tch = +125C - - Typ - 4.0 10 0.2 Max - 4.5 500 1.0 Unit V V A mA V(BR)DSS ID = 1mA, VGS = 0V VGS(th) IDSS ID = 1mA, VDS = VGS VDS = 600V, VGS = 0V Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time, ton (ton = td(on) + tr) Turn-Off Time, toff (toff = td(off) + tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr L = 100H, Tch = +25C IF = 2 x IDR, VGS = 0V, Tch = +25C IF = IDR, VGS = 0V, -dIF/dt = 100A/s, Tch = +25C VCC = 300V, ID = 10A, VGS = 10V, RGS = 10 Test Conditions VGS = 30V, VDS = 0V ID = 4.5A, VGS = 10V ID = 5A, VDS = 25V VDS = 25V, VGS = 0V, f = 1MHz Min - - 3 - - - - - - - 10 - - - Typ 10 0.85 6 1100 170 74 25 70 75 40 - 1.0 500 6.5 Max 100 1.0 - 1700 260 120 40 110 120 60 - 1.5 - - Unit nA S pF pF pF ns ns ns ns A V ns C .114 (2.9) .181 (4.6) .126 (3.2) Dia Max Max .405 (10.3) Max .252 (6.4) Isol .622 (15.0) Max G D S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54) |
Price & Availability of NTE2989
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |